Modeling and Parameter Extraction Technique for HV MOS Devices with BSIM3v3
نویسنده
چکیده
We have developed several kinds of HV MOS devices whose device structures and doping levels in the offset regions differ depending on the specifications of the devices. We have developed the bi-directional HV MOS device (e.g., it can be used as a bi-directional MOS switch) with both drain and source offset regions, and we previously described its SPICE model [4] – [5] based on BSIM3v3 [1] – [3]. On the other hand, the uni-directional HV MOS device has only a drain offset region. That is, it does not have a source offset region with corresponding source resistance.
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